HeimMRAM • NASDAQ
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Everspin Technologies Inc
5,48 $
Eftir lokun(0,00%)0,00
5,48 $
Lokað: 25. apr., 16:02:04 GMT-4 · USD · NASDAQ · Lagalegir fyrirvarar
Við síðustu lokun
5,40 $
Dagbil
5,26 $ - 5,52 $
Árabil
4,34 $ - 7,73 $
Markaðsvirði
122,49 m. USD
Meðalmagn
96,42 þ.
V/H-hlutf.
155,46
A/V-hlutfall
-
Aðalkauphöll
NASDAQ
Viðskiptafréttir
Fjármál
Rekstrarreikningur
Tekjur
Nettótekjur
(USD) | des. 2024info | Breyting á/á |
---|---|---|
Tekjur | 13,24 m. | -20,73% |
Rekstrarkostnaður | 8,36 m. | 2,94% |
Nettótekjur | 1,21 m. | -38,31% |
Hagnaðarhlutfall | 9,17 | -22,16% |
Hagnaður á hvern hlut | 0,13 | -28,65% |
EBITDA | -1,12 m. | -159,51% |
Virkt skatthlutfall | -11,58% | — |
Efnahagsreikningur
Heildareignir
Heildarskuldir
(USD) | des. 2024info | Breyting á/á |
---|---|---|
Reiðufé og skammtímafjárfestingar | 42,10 m. | 13,94% |
Heildareignir | 77,79 m. | 15,58% |
Heildarskuldir | 15,20 m. | 13,56% |
Eigið fé alls | 62,59 m. | — |
Útistandandi hlutabréf | 22,14 m. | — |
Eiginfjárgengi | 1,90 | — |
Arðsemi eigna | -5,18% | — |
Ávöxtun eigin fjár | -5,77% | — |
Peningaflæði
Breyting á handbæru fé
(USD) | des. 2024info | Breyting á/á |
---|---|---|
Nettótekjur | 1,21 m. | -38,31% |
Handbært fé frá rekstri | 3,83 m. | 87,71% |
Reiðufé frá fjárfestingum | -1,76 m. | -449,38% |
Reiðufé frá fjármögnun | 434,00 þ. | 49,66% |
Breyting á handbæru fé | 2,51 m. | 24,70% |
Frjálst peningaflæði | 368,88 þ. | -72,30% |
Um
Everspin Technologies, Inc. is a publicly traded semiconductor company headquartered in Chandler, Arizona, United States. It develops and manufactures discrete magnetoresistive RAM or magnetoresistive random-access memory products, including Toggle MRAM and Spin-Transfer Torque MRAM product families. It also licenses its technology for use in embedded MRAM applications, magnetic sensor applications as well as performs backend foundry services for eMRAM.
MRAM has the performance characteristics close to static random-access memory while also having the persistence of non-volatile memory, meaning that it will not lose its charge or data if power is removed from the system. This characteristic makes MRAM suitable for a large number of applications where persistence, performance, endurance and reliability are critical. Wikipedia
Stofnsett
2008
Höfuðstöðvar
Vefsvæði
Starfsfólk
87