Domača stranMRAM • NASDAQ
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Everspin Technologies Inc
6,26 $
Po zaprtju:(0,00 %)0,00
6,26 $
Konec trgovanja: 18. okt., 16:02:23 GMT -4 · USD · NASDAQ · Izjava
Prejšnji trg. dan.
6,33 $
Dnevni razpon
6,20 $ - 6,38 $
Letni razpon
4,89 $ - 10,50 $
Tržna kapitalizacija
136,11 mio. USD
Povprečni obseg
94,23 tis.
Razm. P/E
81,16
Dividendna donosnost
-
Primarna borza
NASDAQ
Borzne novice
Finančni podatki
Izkaz poslovnega izida
Prihodek
Čisti dohodek
| (USD) | jun. 2024info | Sprememba L/L |
|---|---|---|
Prihodek | 10,64 mio. | −32,46 % |
Stroški poslovanja | 8,04 mio. | 6,14 % |
Čisti dohodek | −2,50 mio. | −164,40 % |
Čista dobičkovnost prihodkov | −23,52 | −195,34 % |
Earnings per share | −0,03 | −112,26 % |
EBITDA | −2,42 mio. | −227,01 % |
Efektivna davčna stopnja | −3,13 % | — |
Bilanca stanja
Skupna sredstva
Skupne obveznosti
| (USD) | jun. 2024info | Sprememba L/L |
|---|---|---|
Denar. in kratkor. naložbe | 36,76 mio. | 19,25 % |
Skupna sredstva | 64,56 mio. | 12,74 % |
Skupne obveznosti | 9,14 mio. | −18,35 % |
Celoten lastniški kapital | 55,42 mio. | — |
Shares outstanding | 21,74 mio. | — |
Razmerje P/B | 2,47 | — |
Donosnost sredstev | −10,78 % | — |
Donosnost kapitala | −11,55 % | — |
Denarni tok
Neto sprememba denarnih sredstev
| (USD) | jun. 2024info | Sprememba L/L |
|---|---|---|
Čisti dohodek | −2,50 mio. | −164,40 % |
Denar iz dejavnosti | 1,72 mio. | −72,80 % |
Denar iz naložb | −34,00 tis. | 8,11 % |
Denar iz financiranja | 276,00 tis. | −16,11 % |
Neto sprememba denarnih sredstev | 1,96 mio. | −70,34 % |
Prost denarni tok | 2,50 mio. | −26,81 % |
Vizitka
Everspin Technologies, Inc. is a publicly traded semiconductor company headquartered in Chandler, Arizona, United States. It develops and manufactures discrete magnetoresistive RAM or magnetoresistive random-access memory products, including Toggle MRAM and Spin-Transfer Torque MRAM product families. It also licenses its technology for use in embedded MRAM applications, magnetic sensor applications as well as performs backend foundry services for eMRAM.
MRAM has the performance characteristics close to static random-access memory while also having the persistence of non-volatile memory, meaning that it will not lose its charge or data if power is removed from the system. This characteristic makes MRAM suitable for a large number of applications where persistence, performance, endurance and reliability are critical. Wikipedia
Datum ustanovitve
2008
Sedež organizacije
Spletno mesto
Zaposleni
83
