Bosh sahifaMRAM • NASDAQ
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Everspin Technologies Inc
6,19 $
Seans yopilganidan keyin:(0,00%)0,00
6,19 $
Yopilgan:30-yan, 16:00:06 (GMT-5) · USD · NASDAQ · Ogohlantirish
Yopilish kursi
6,22 $
Kunlik diapazon
6,15 $ - 6,29 $
Yillik diapazon
4,89 $ - 9,39 $
Bozor kapitalizatsiyasi
136,01 mln USD
Oʻrtacha hajm
117,74 ming
Narx/foyda
90,05
Dividend daromadliligi
-
Asosiy maydon
NASDAQ
Yangiliklarda
Moliyaviy axborot
Moliyaviy hisobot
Daromad
Sof foyda
(USD) | sen, 2024info | Y/Y qiyosi |
---|---|---|
Daromad | 12,09 mln | -26,56% |
Joriy xarajat | 8,07 mln | 1,60% |
Sof foyda | 2,27 mln | -6,85% |
Sof foyda marjasi | 18,78 | 26,81% |
Har bir ulushga tushum | 0,17 | 1,39% |
EBITDA | -1,71 mln | -175,56% |
Amaldagi soliq stavkasi | 0,44% | — |
Balans
Jami aktivlari
Jami passivlari
(USD) | sen, 2024info | Y/Y qiyosi |
---|---|---|
Naqd pul va qisqa investitsiyalar | 39,59 mln | 13,32% |
Jami aktivlari | 72,60 mln | 15,25% |
Jami passivlari | 13,33 mln | 5,45% |
Umumiy kapital | 59,27 mln | — |
Tarqatilgan aksiyalar | 21,97 mln | — |
Narxi/balansdagi bahosi | 2,30 | — |
Aktivlardan daromad | -7,71% | — |
Kapitaldan daromad | -8,46% | — |
Pul aylanmasi
Naqd pulning sof oʻzgarishi
(USD) | sen, 2024info | Y/Y qiyosi |
---|---|---|
Sof foyda | 2,27 mln | -6,85% |
Operatsiyalardan naqd pul | 2,84 mln | -20,17% |
Sarmoyadan naqd pul | -63,00 ming | -270,59% |
Moliyadan naqd pul | 49,00 ming | -91,34% |
Naqd pulning sof oʻzgarishi | 2,82 mln | -31,19% |
Boʻsh pul | -768,88 ming | -133,01% |
Haqida
Everspin Technologies, Inc. is a publicly traded semiconductor company headquartered in Chandler, Arizona, United States. It develops and manufactures discrete magnetoresistive RAM or magnetoresistive random-access memory products, including Toggle MRAM and Spin-Transfer Torque MRAM product families. It also licenses its technology for use in embedded MRAM applications, magnetic sensor applications as well as performs backend foundry services for eMRAM.
MRAM has the performance characteristics close to static random-access memory while also having the persistence of non-volatile memory, meaning that it will not lose its charge or data if power is removed from the system. This characteristic makes MRAM suitable for a large number of applications where persistence, performance, endurance and reliability are critical. Wikipedia
Tashkil etilgan
2008
Sayt
Xodimlar soni
83